Figure 2From: Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography Schematic of two groups of QD samples with the structures of: (A) 1.5-nm InGaN sandwiched between 1 GaN layers (Sample A); (B) 3 nm InGaN sandwiched between 2-nm GaN layers (Sample B).Back to article page