Figure 6From: Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography AFM measurement using Dimension 3000 for SAE-grown InGaN/GaN QDs arrays on sample A after removal of SiN x : (a) AFM scan with the scale of 0.5 μm × 0.5 μm; (b) the corresponding height and size of the cross-sectional profiles.Back to article page