Figure 1From: CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth STM images of Ge WL on Si(001): (a) before cluster nucleation, h Ge = 4.4 Å (U s = -1.86 V, I t = 100 pA); (b) arising nuclei of pyramidal (1) and wedgelike (2) huts, h Ge = 5.1 Å (U s = +1.73 V, I t = 150 pA).Back to article page