Figure 2From: Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application HR-SEM images of the resist and HfO 2 patterns. Plan view images of (a) the resist pattern after laser interference nanolithography and (b) the resulting HfO2 nanopattern after CF4/O2 ICP-RIE and HCl/H2O cleaning.Back to article page