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Figure 6 | Nanoscale Research Letters

Figure 6

From: Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Figure 6

TEM-EDS analysis of the HfO 2 /GaAs pattern. (a) Cross-section TEM image of a 100nm-wide HfO2 mesa stripe and a GaAs trench after nanostructuring. (b) Corresponding EDS elemental maps for O (K), Hf (M), Ga (L), and As (L). The amorphous layer located at the trench bottom surface is constructed of gallium oxide. Hf is concentrated in the mesa stripe and side feet.

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