Skip to main content
SpringerLink
Account
Figure 6 | Nanoscale Research Letters

Figure 6

From: Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Figure 6

TEM-EDS analysis of the HfO 2 /GaAs pattern. (a) Cross-section TEM image of a 100nm-wide HfO2 mesa stripe and a GaAs trench after nanostructuring. (b) Corresponding EDS elemental maps for O (K), Hf (M), Ga (L), and As (L). The amorphous layer located at the trench bottom surface is constructed of gallium oxide. Hf is concentrated in the mesa stripe and side feet.

Back to article page

Search

Navigation