Figure 5From: Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography FE-SEM images of patterns at each step of TAHL process with a stamp having a relief height of 260 nm. Afterwards (a) development, (b) oxygen plasma treatment for 600 s, (c) Cr lift-off, and (d) reactive ion etching, Cr mask removal (tilt view). SEM images of nanoscale silicon line defects along the (e) cross and (f) arrow edges.Back to article page