Figure 1

FE-SEM (45° tilted view) and TEM images of the InAs nanowires grown for 7 min on Si(111) substrates. Nanowires were (a) grown at 530°C (sample A), (b) grown at 550° C (sample B), (c) grown at 570° C (sample C); (d) low-resolution TEM image of the nanowire. (e) High-resolution image of a portion of the nanowires. The inset of (a) shows a higher magnification image of sample A; the inset of (b) is a top view image; the inset of (e) shows the fast Fourier transform of the selected area on (e), which is viewed along the 0 [1–11] direction.