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Figure 4 | Nanoscale Research Letters

Figure 4

From: Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Figure 4

Raman spectra of InAs NWs recorded parallel and perpendicular to the c-axis. (a) Raman spectra of as-grown vertical aligned InAs NWs (sample B) recorded in backscattering geometry parallel to the c-axis, (b) Raman spectra of InAs NWs recorded perpendicular to the c-axis of nanowires. Excitation laser power 0.25 mW, the lighter colored (green) lines are results from a multiple Lorentzian fit.

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