Figure 4From: Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates Raman spectra of InAs NWs recorded parallel and perpendicular to the c-axis. (a) Raman spectra of as-grown vertical aligned InAs NWs (sample B) recorded in backscattering geometry parallel to the c-axis, (b) Raman spectra of InAs NWs recorded perpendicular to the c-axis of nanowires. Excitation laser power 0.25 mW, the lighter colored (green) lines are results from a multiple Lorentzian fit.Back to article page