Skip to main content
SpringerLink
Account
Figure 1 | Nanoscale Research Letters

Figure 1

From: Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Figure 1

STM empty-state images of hut nuclei on Ge WL formed at different temperatures: a pyramid (1) and wedge (2) nuclei on the adjacent M × N patches of WL; T gr = 360°C, h Ge = 6 Å; the structural models [20, 32] are superimposed on the corresponding images in a; b, c pyramid nuclei on WL formed at low temperature (T gr = 360°C): b h Ge = 5.4 Å; c h Ge = 6 Å; d, e a pyramid nucleus on WL formed at high temperature, h Ge = 5 Å: d T gr = 600°C, 43 × 37 nm; e T gr = 650°C, 7.8 × 6 nm.

Back to article page

Search

Navigation