Figure 10

STM images and RHEED patterns of Si:H surfaces obtained as a result of hydrogenation in NH ₄ F or HF + NH ₄ F solution after different heat treatments: a-c, f STM empty-state images; a NH₄F, 650°C for 5 min, 40 × 40 nm; b HF + NH₄F, 610°C for 10 min, 56 × 56 nm; c NH₄F, 610°C for 10 min, 88 × 87 nm; d, e corresponding RHEED patterns, E = 10 keV: d [110], e [010]; f NH₄F, 550°C for 35 min, 60 × 60 nm; g, h corresponding RHEED patterns, E = 10 keV: g [110], h [010].