Figure 3From: Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask (a) Plots of RMS roughness and (b) photo reflectanceof bare-Si, conventional wet chemical-etched Si using square masks, ICP-etched Si using MWCNT-dispersion in isopropyl-alcohol and ICP-etched Si using MWCNT-dispersion in HMDS. The reflectance of bare-Si is set as a reference (100%). The spectral region is mid-UV in (b).Back to article page