Figure 7From: Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask Plot of PS indicating the ratio of the current at UV-illumination over the current under dark of the reference device and ICP-etched Si device. ICP-etched Si device shows a much higher PS (black dots), indicating a much enhanced light-trapping of MWCNT masked Si under UV illumination.Back to article page