Figure 4From: STEM nanoanalysis of Au/Pt/Ti-Si3N4 interfacial defects and reactions during local stress of SiGe HBTs STEM-HAADF micrograph and EDS analysis of the emitter contact stressed during 30 min. (a)The red dotted line represents the EDS line scan. (b) EDS line scan showing the elemental evolution along the longitudinal section of the emitter contact after 30 min of stress.Back to article page