Figure 5From: Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics A graph of the SiNW length versus the processing duration. The graph shows the evolution of the SiNW length as a function of the etching time by MACE at 30°C of non-patterned areas (black squares) and of 100 × 100-μm2 lithographically defined surface areas (red circles). It is clearly depicted that the etching rate is much higher on lithographically defined areas compared to the non-patterned ones. This mainly occurs at the beginning of the process.Back to article page