Figure 6

Arrhenius plots of the formation rate of SiNWs on non-patterned and on lithographically defined areas. Arrhenius plots of the etch rate of Si by MACE as a function of temperature in the case of non-patterned areas (dark squares) and in the case of lithographically defined confined areas (red circles). From these plots, the process activation energy is calculated at approximately 0.37 eV in the first case and at approximately 0.38 eV in the second case.