Figure 4From: Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes I-V asymmetry dependence on growth interruption. I-V asymmetry dependence on growth interruption at the AlAs/In0.53Ga0.47As interfaces with an AlAs barrier thickness of 2.73 nm.Back to article page