Table 2 Etching reagent of GaAs, InGaAs, and InGaP materials
From: Compound semiconductor nanotube materials grown and fabricated
Materials | Etching reagent (molar ratio) |
|---|---|
GaAs and InGaAs | Citric acid/H2O2 = 1:1 |
InGaP | H3PO4/HCl = 3:1 |
From: Compound semiconductor nanotube materials grown and fabricated
Materials | Etching reagent (molar ratio) |
|---|---|
GaAs and InGaAs | Citric acid/H2O2 = 1:1 |
InGaP | H3PO4/HCl = 3:1 |