Figure 1From: Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes SEM image of ZnO nanorods on p-GaN substrate. (a) As grown, (b) after irradiation with fluency of approximately 2 × 1013 ions/cm2, (c) after irradiation with fluency of approximately 4 × 1013 ions/cm2, and (d) typical I-V characteristics for the fabricated LEDs.Back to article page