Figure 4From: Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns High quality nanopatterned masks resulting in ordered columnar growth. Left side: ordered arrays of nanoholes on Ti masks on GaN template, obtained by (a) EBL, (c) CL, and (e) FIB. Right side: typical results (b, d, and f) of the selective area growth of GaN NCs by PA-MBE on each of the respective masks.Back to article page