Figure 3From: Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method SEM images of the GaN surface morphologies. The etching time is (a) 0 min (b) 5 min, and (c) 10 min. The cracks extend along the (1010) plane. (d) This is an optical micrograph of the cracks. This image is a transmitted image (10.5 mm × 8.5 mm).Back to article page