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Figure 3 | Nanoscale Research Letters

Figure 3

From: Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands

Figure 3

Unit stereographic sector showing by the open symbols the measured angles ( θ , φ ) of all new facets of 30 individual half-sphere SiGe islands on Si(001) substrate grown at 900°C as derived from the surface orientation maps exemplified in Figure 2. Full yellow circles mark the average (θ, φ) values for each facet group. The previously reported dome and barn facets of {105}, {113}, {15 3 23} and {111} are indicated by the red squares. The AFM insert at the top illustrates the stereographic projection of the normal vector and its relation to the (θ, φ) angles for the case of a SiGe dome island.

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