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Figure 3 | Nanoscale Research Letters

Figure 3

From: Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT

Figure 3

Microscope photographs of surface morphology. Microscope photographs of surface morphology of Ti/Al/Ta/Au (20/80/40/100 nm) ohmic stacks with different SiNx thicknesses after annealing at 850°C for 30 s: (a) with 50-nm SiNx encapsulation layer, (b) 100-nm SiNx encapsulation layer, (c) 150-nm SiNx encapsulation layer, and (d) 200-nm SiNx encapsulation layer.

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