Figure 3From: Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etchingSEM images of SiGe NRs fabricated by Au-assisted wet chemical etching at various solution temperatures. Solution temperatures of (a) 5°C, (b) 15°C, (c) 20°C, and (d) 25°C for 20 min.Back to article page