Figure 4From: Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVDThe 2-DEG between AlN/GaN interface with different AlN thickness. (a) The thickness of AlN barrier less than the critical thickness (d0), (b) the thickness of AlN barrier beyond d0, and (c) the thickness of AlN barrier beyond d0, and the GaN was deposited on the AlN barrier.Back to article page