Figure 2From: Fabrication mechanism of friction-induced selective etching on Si(100) surfaceDetection on the mask ability of the distorted silicon layer. (a) Original Si(100) surface with native oxidation layer, (b) Si(100) surface after scratching, (c) Si(100) surface after etching in HF solution to remove surface oxidation layer. (d) Si(100) surface after etching in KOH solution.Back to article page