Figure 4
From: Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
Peak transconductance and extracted carrier density. (a) Peak transconductance (black circles) normalized to the gate length and resistivity (black squares). Values are plotted as a function of the DtBSe precursor line pressure. Inset: 3D finite element electrostatic potential simulation calculated by applying a gate voltage Vg = -1 V at sample c while keeping Vds = 0. Continuous boundary conditions are applied to the air-Si interface. Isosurfaces corresponding to different values of the electrostatic potential are shown on the graph. (b) Extracted carrier density (black circles) in the transistor channel as a function of the DtBSe precursor line pressure.