Figure 3From: Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As x Sb1-xinterfacesCrystalline properties of the samples characterized by HRXRD. Experimental XRD pattern of a 100-period InAs/GaSb SL sample (a). Dynamical simulation to pattern (a) with the fitting parameter x = 0.1 (b). Dynamical simulation with the fitting parameter x = 0.18, making the SL match the completely GaSb substrate (c).Back to article page