Figure 3From: A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowiresProgramming properties of the JL and IM NW SONOS devices. (a) Programming characteristics at gate biases of 9, 11, and 13 V. (b) Evolution of the ID-VG curves for the JL device during programming at 13 V from 1 μs to 1 ms.Back to article page