The C-V hysteresis of capacitor structure Al/HfO
/Si for two different HfO
thicknesses. Inset shows the J-V characteristic of the same capacitor structure. The gate voltage of the C-V hysteresis was swept from -3 to +3 V and then swept back. All the gate voltages were normalized with the VFB of the forward (-3 to +3V) C-V curve (VFBf).