Figure 5From: Gadolinium oxide nanocrystal nonvolatile memory with HfO2/Al2O3 nanostructure tunneling layersProgramming (a) and erasing (b) characteristic of Gd 2 O 3 -NC memories with nanostructure tunneling layer. Insets show the extracted VFB shift of various P/E voltages at 1 ms/1 s.Back to article page