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Figure 2 | Nanoscale Research Letters

Figure 2

From: Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

Figure 2

Different images of IrO x -NDs in an IrO x /Al 2 O 3 /IrO x -NDs/Al 2 O 3 /SiO 2 /n-Si MIS structure. (a) Cross-sectional HRTEM image on IrOx-NDs in an IrOx/Al2O3/IrOx-NDs/Al2O3/SiO2/n-Si MIS structure. (b) Plane view TEM image. (c) Scanning tunneling electron microscope image and (d) a single core-shell IrOx-ND. (e) Histogram of the IrOx-NDs with an average size of 1.3 nm with a high density of IrOx-NDs of 1 × 1013/cm2.

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