Figure 8From: Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dotsThe schematic illustration of the switching mechanisms of NF and PF devices. Schematic illustration of the switching mechanisms of (a) the NF devices and (b) the PF devices under set operation, (c) the NF devices and (d) the PF devices under reset operation.Back to article page