Figure 9From: Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dotsThe non-destructive read endurance of 105 cycles and retention characteristics of the PF devices. (a) Non-destructive read endurance of 105 cycles of the PF devices. (b) Retention characteristics of the PF devices at RT and 85°C.Back to article page