Figure 4From: Bending effects of ZnO nanorod metal–semiconductor–metal photodetectors on flexible polyimide substrateSchematic drawing of the bending device, and the dark I-V characteristics and responsivity characteristics. (a) Schematic drawing of the bending device. (b) The I-V and (c) responsivity characteristics of the PD measured from flat and bending substrate in the dark.Back to article page