Figure 2
From: Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)
The typical light response properties of the single CdS NB MESFET-based photodetectors. (a) The transfer characteristics of a CdS NB MESFET-based photodetector measured in the dark (black line) and under illumination (red line). (b) On/off photocurrent response of the CdS NB without Schottky contact as a function of time. (c) On/off photocurrent response of the CdS NB MESFET-based photodetector with VG = 0 V as a function of time on a linear scale. (d) On/off photocurrent response of the CdS NB MESFET-based photodetector with VG = −3.8 V as a function of time on an exponential scale. (e) A transient response of the CdS NB MESFET-based photodetector (VG = −3.8 V, VDS = 0.5 V) along with a reference signal of the chopped light with a frequency of 1,000 Hz. (f) A close-up of the result shown in (e).