Table 1 DRIE of silicon with SF 6 and C 4 F 8 plasma
Process Conditions | Value |
---|---|
Source Power | 1500 W |
Bias Power | 12 W |
SF6 Flow | 250 sccm |
C4F8 Flow | 300 sccm |
Silicon Etch Rate | 1.5 μm/min |
Process Conditions | Value |
---|---|
Source Power | 1500 W |
Bias Power | 12 W |
SF6 Flow | 250 sccm |
C4F8 Flow | 300 sccm |
Silicon Etch Rate | 1.5 μm/min |