Quantum dot-doped porous silicon metal–semiconductor metal photodetector
© Chou et al.; licensee Springer. 2012
Received: 5 April 2012
Accepted: 23 May 2012
Published: 6 June 2012
In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.
KeywordsPorous silicon Quantum dots Photodetector
Colloidal quantum dots (QDs) are semiconductor nanocrystals with tunable optical property depending on their sizes and shapes that can be controlled by the fabrication process. Outstanding optoelectronic and photonic properties, such as electroluminescence, photoluminescence, photovoltaics, absorption, and narrow emission linewidth, make QDs a good candidate for photodetectors [1–6], light emitting diodes [7–9] and lasers applications [10–12]. Because of the QDs’ inherent solution-processable property, several studies have incorporated QDs into organic or inorganic matrix and demonstrated these hybrid devices with improved optoelectronic performances [13–20]. In this paper, we report on the enhancement of photoresponsivity in inorganic/inorganic hybrid device consisting of porous silicon (PS)-MSM (metal–semiconductor–metal) photodetector and CdSe/CdS/ZnS core shell QDs embedded in the pores within the PS. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS and further enhances the photoresponsivity. We also show that the photoresponsitivity depends on the numbers of coating of QDs and the pore size of PS which could be controlled by the anodization time.
Results and discussion
We have presented an enhancement of the photoresponsitivity of QDs/PS hybrid MSM photodetector. We found out that the bandgap alignment between QDs and PS facilitates the electron transfer and further increases the photoresponsitivity. By choosing different anodization time and layers of QD coating, we demonstrate the flexibility in fabricating QDs/PS hybrid MSM photodetector.
VKSH received a Ph.D. from Electrical Engineering in SUNY at Buffalo in 2005. He is currently an associate professor in the Department of Applied Materials and Optoelectronic Engineering at National Chi Nan University, Taiwan. His research interests include organic/inorganic nanoporous materials, photoresponsive LC-based photonic devices, and optical thin films. CMC is a medical doctor at the Department of Surgery in Taichung Veterans General Hospital, Taiwan. HTC is an undergraduate student. KTY is an assistant professor at the Nanyang Technological University in the School of Electrical and Electronic Engineering. He received his Ph.D. from Chemical and Biological Engineering in SUNY at Buffalo in 2006. His research interests involve the synthesis, functionalization, and application of nanoparticles. WCL is a postdoctoral scholar in the Institute for Lasers, Photonics and Biophotonics (ILPB).
This study was supported by Taichung Veterans General Hospital/National Chi Nan University Joint Research Program (TCVGH-NCNU-1007903).
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