Figure 2From: Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusionThe surface morphology of GeSi islands. Surface morphology of GeSi islands grown on the nanotip pre-patterned Si (100) substrates grown at (a) 450 °C for 4 min, (b) 500 °C for 4 min, and (c) 550 °C for 4 min; (d) the cross-sectional high-resolution TEM images of GeSi islands grown at 500 °C.Back to article page