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Figure 1 | Nanoscale Research Letters

Figure 1

From: Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Figure 1

Schematics of the p–i–n -structures. Stacks of five layers of Ge hut clusters (quantum dots) separated by Si barriers are built in the intrinsic domains of the p–i–n diodes; the p–i–n mesa structures were formed on CZ n-Si(100) substrates (ρ=0.1 Ω cm); composition and thickness of each layer of the mesa structures as well as locations of Al contacts are shown in the scatches; (a) in the R 163 structure, the boron concentration in the Si cap layer is 5×1018 cm−3; (b) the boron concentration in the Si cap layer of the R 166 structure is 1019 cm−3.

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