Figure 4
In situ RHEED patterns of Ge/Si(001) films. E = 10 keV, [110] azimuth; (a) Tgr= 650℃, hGe= 4 Å; (b) Tgr= 360℃, hGe= 4 Å; (c) Tgr= 650℃, hGe= 5 Å; (d) Tgr= 650℃, hGe= 5 Å, annealing at the deposition temperature for 7 min; (e) Tgr= 650℃, hGe= 6 Å, the similar pattern is obtained for Tgr= 600℃; the patterns were obtained at room temperature after sample cooling.