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Table 2 Comparison of the electrical parameters of phosphorous gettered and ungettered multicrystalline silicon solar cells

From: Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer

Temperature (°C)	J_sc(mA/cm²)	V_oc(V)	FF	η
Reference	18.5	0.48	67	5.9
700	21.3	0.50	69.4	7.4
800	24.4	0.52	70.5	8.9
850	26.3	0.53	74.8	10.4
900	27.4	0.55	77.2	11.6

FF, fill factor; J_sc, short-circuit current density; V_oc, open-circuit voltage; η, efficiency.

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