Figure 4From: Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistorsRelationship between electron mobility of 2DEG and applied gate bias at room temperature. They are for samples with drain-to-source distances of 100 (a), 60 (b), 20 (c), and 15 and 9 μm (d); (a) is referenced from our former literature [6].Back to article page