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Figure 4 | Nanoscale Research Letters

Figure 4

From: Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

Figure 4

 I  -  V  characteristic of SWCNT model, semiconducting and metallic CNT experimental data. I V characteristic of a 50-nm SWCNT model (dotted lines) demonstrated in comparison to L ≈ 50 nm semiconducting CNT experimental data (filled diamond). Metallic CNT experimental data are also shown (filled circle). Inset shows 45-nm MOSFET characteristics where the dimension is given in Table2. Initial VG at the top for CNT and MOSFET is 1 V with 0.1-V steps. (Adapted from[10]).

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