Figure 3From: Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBESEM cross-sectional images of InN film/nanorods by RF-MOMBE in a 4-μm thick GaN template. (a) The thickness of the film was approximately 1.7 μm with a growth rate of approximately 0.85 μm/h (b) Nanorods formed a cone-shaped columnar structure with separated InN columns.Back to article page