Figure 2From: Computational simulation of the effects of oxygen on the electronic states of hydrogenated 3C-porous SiCFormation energy evolution with increasing O levels. The formation energies for the (a) double-bonded and (b) bridge-bonded cases are shown. In the insets, the 4-oxygen structures for each surface are shown in both cases. The squares and solid circles represent the 15.6% porosity results, and the triangles and diamonds represent the 40.6% porosity results.Back to article page