Figure 1
From: Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
Morphology of the QDs. (a) An SEM image of the top surface of the InAs/GaAs(001) QDs; (b) a [] cross-sectional TEM image showing a relaxed InAs island on the GaAs(001) substrate. Line 1 and line 2 indicate the positions of the crystalline surface of the substrate and the surface of the dark amorphous layer, respectively. Three misfit dislocations in the relaxed island are marked with three white arrows.