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Figure 1 | Nanoscale Research Letters

Figure 1

From: Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

Figure 1

Confinement potential and z -dependent amplitude of probability for the first two electron and ground hole confined states in a In 0.2 Ga 0.8 N-GaN QW. The results are for L=200 Å and have been considered several values of the ILF-parameter:α0 = 0(a),α0 = 50 Å (b),α0 = 100 Å (c),α0 = 150 Å (d). For the sake of illustration, the scale for the wave function amplitudes has been set to the same value. Graphics in row (e) correspond to the variation of the energies of the first two electron states (left panel) and the heavy hole ground state (right panel) as functions of the intense laser field parameter. In all cases, it is taken that F = 0 and P = 0.

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