Figure 6From: Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μ m)Measured responsivity and detectivity. As a function of applied bias for Ge/Si QDIPs in which the distance between the δ-doping layer and the QD plane d was varied from 2 to 10 nm. All devices have a top doping configuration with pB = 8 × 1011cm−2.Back to article page