Figure 8From: Structural variations of Si1−xC x and their light absorption controllabilitySi 2 p XPS spectra of as-deposited and 1,000 °C annealed samples. Surface layer (approximately 50 nm) is removed before characterization to eliminate the surface oxidation effect (initial sample thickness was 150 nm). After annealing, the Si 2p peak is shifted towards a higher energy, which indicates the increment of Si-C bond density.Back to article page