Table 1 Optical energy bandgaps for different samples
From: Opto-structural studies of well-dispersed silicon nano-crystals grown by atom beam sputtering
Sample | Optical energy bandgapEopt(eV) |
|---|---|
As-deposited | 1.76 |
RTA at 800°C | 1.74 |
RTA at 850°C | 1.64 |
RTA at 900°C | 1.63 |
RTA at 950°C | 1.55 |